Low Oxide Trench Dishing Chemical Mechanical Polishing

ABSTRACT

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

CROSS REFERENCE TO RELATED PATENT APPLICATIONS

The application is a divisional application of U.S. application Ser. No.16/450,732 filed on Sep. Jun. 24, 2019 which claims the benefit ofpriority under 35 U.S.C. § 119(e) to earlier filed U.S. patentapplications Ser. Nos. 62/692,633, and 62/692,639 filed on Jun. 29,2018, which are entirely incorporated herein by reference.

BACKGROUND OF THE INVENTION

This invention relates to the chemical mechanical planarization (CMP)for polishing oxide and doped oxide films.

In the fabrication of microelectronics devices, an important stepinvolved is polishing, especially surfaces for chemical-mechanicalpolishing for the purpose of recovering a selected material and/orplanarizing the structure.

For example, a SiN layer is deposited under a SiO₂ layer to serve as apolish stop. The role of such polish stop is particularly important inShallow Trench Isolation (STI) structures. Selectivity ischaracteristically expressed as the ratio of the oxide polish rate tothe nitride polish rate. An example is an increased polishingselectivity rate of silicon dioxide (SiO₂) as compared to siliconnitride (SiN).

In the global planarization of patterned structures, reducing oxidetrench dishing is a key factor to be considered. The lower trench oxideloss will prevent electrical current leaking between adjacenttransistors. Non-uniform trench oxide loss across die (within Die) willaffect transistor performance and device fabrication yields. Severetrench oxide loss (high oxide trench dishing) will cause poor isolationof transistor resulting in device failure. Therefore, it is important toreduce trench oxide loss by reducing oxide trench dishing in CMPpolishing compositions.

U.S. Pat. No. 5,876,490 discloses the polishing compositions containingabrasive particles and exhibiting normal stress effects. The slurryfurther contains non-polishing particles resulting in reduced polishingrate at recesses, while the abrasive particles maintain high polishrates at elevations. This leads to improved planarization. Morespecifically, the slurry comprises cerium oxide particles and polymericelectrolyte, and can be used for Shallow Trench Isolation (STI)polishing applications.

U.S. Pat. No. 6,964,923 teaches the polishing compositions containingcerium oxide particles and polymeric electrolyte for Shallow TrenchIsolation (STI) polishing applications. Polymeric electrolyte being usedincludes the salts of polyacrylic acid, similar as those in U.S. Pat.No. 5,876,490. Ceria, alumina, silica & zirconia are used as abrasives.Molecular weight for such listed polyelectrolyte is from 300 to 20,000,but in overall, <100,000.

U.S. Pat. No. 6,616,514 discloses a chemical mechanical polishing slurryfor use in removing a first substance from a surface of an article inpreference to silicon nitride by chemical mechanical polishing. Thechemical mechanical polishing slurry according to the invention includesan abrasive, an aqueous medium, and an organic polyol that does notdissociate protons, said organic polyol including a compound having atleast three hydroxyl groups that are not dissociable in the aqueousmedium, or a polymer formed from at least one monomer having at leastthree hydroxyl groups that are not dissociable in the aqueous medium.

However, the importance of oxide trench dishing reducing has not beenaddressed in the STI CMP polishing process.

It should be readily apparent from the foregoing that there remains aneed within the art for compositions, methods and systems of chemicalmechanical polishing that can afford the reduced oxide trench dishingand improved over polishing window stability in a chemical andmechanical polishing (CMP) process, in addition to high removal rate ofsilicon dioxide as well as high selectivity for silicon dioxide tosilicon nitride.

BRIEF SUMMARY OF THE INVENTION

The present invention provides Chemical mechanical polishing (CMP)compositions, methods and systems in CMP applications for polishingoxide.

The present invention provides the benefits of achieving high oxide filmremoval rates, low SiN film removal rates, high and tunable Oxide: SiNselectivity, lower total defect counts post-polishing, excellent meanparticle size (nm) stability, and importantly, significantly reducingoxide trench dishing and improving over polishing window stability.

In one aspect, there is provided a CMP polishing composition comprises:abrasive particles selected from the group consisting of ceria-coatedinorganic metal oxide particles, ceria-coated organic polymer particles,and combinations thereof;

-   chemical additive as oxide trenching dishing reducer,-   a solvent; and-   optionally-   biocide; and-   pH adjuster;-   wherein the composition has a pH of 2 to 12, preferably 3 to 10, and    more preferably 4 to 9.

The ceria-coated inorganic metal oxide particles include, but are notlimited to, ceria-coated colloidal silica, ceria-coated high puritycolloidal silica, ceria-coated alumina, ceria-coated titania,ceria-coated zirconia, or any other ceria-coated inorganic metal oxideparticles.

The ceria-coated organic polymer particles include, but are not limitedto, ceria-coated polystyrene particles, ceria-coated polyurethaneparticle, ceria-coated polyacrylate particles, or any other ceria-coatedorganic polymer particles.

The preferred abrasive particles are ceria-coated inorganic metal oxideparticles; more preferred abrasive particles are ceria-coated silicaparticles.

The solvent includes but is not limited to deionized (DI) water,distilled water, and alcoholic organic solvents.

The chemical additives contain at least one six-member ring structuremotif ether bonded with at least one polyol molecular unit containingmultiple hydroxyl functional groups in the molecular unit structures orat least one polyol molecular unit containing multiple hydroxylfunctional groups in the molecular unit structures and at least onesix-member ring polyol. A polyol is an organic compound containinghydroxyl groups.

The chemical additives as oxide trenching dishing reducers contain atleast two, at least four, or at least six hydroxyl functional groups intheir molecular structures.

The general molecular structure for the chemical additives is shown in(a):

In one embodiment, at least one R in the group of R1 to R5 in thegeneral molecular structure is a polyol molecular unit having astructure shown in (b):

wherein n and m can be the same or different. m or n is independentlyselected from 1 to 5, preferably from 1 to 4, more preferably from 1 to3, and most preferably from 1 to 2. R6 to R9 can be the same ordifferent atoms or functional groups and each is independently selectedfrom the group consisting of hydrogen, alkyl, alkoxy, organic group withone or more hydroxyl groups, substituted organic sulfonic acid or salt,substituted organic carboxylic acid or salt, organic carboxylic ester,organic amine, and combinations thereof;

-   and the rest of Rs in the group of R1 to R5 can be independently    selected from the group consisting of hydrogen, alkyl, alkoxy,    organic group with one or more hydroxyl groups, substituted organic    sulfonic acid or salt, substituted organic carboxylic acid or salt,    organic carboxylic ester, organic amine, and combinations thereof.

In another embodiment, at least one R in the group of R1 to R5 in thegeneral molecular structure is a polyol molecular unit having astructure shown in (b); at least one R in the group of R1 to R5 in thegeneral molecular structure is a six-member ring polyol as shown in (c):

wherein each of R10, R11, R12, R13 and R14 is independently selectedfrom the group consisting of hydrogen, alkyl, alkoxy, organic group withone or more hydroxyl groups, substituted organic sulfonic acid or salt,substituted organic carboxylic acid or salt, organic carboxylic ester,organic amine, and combinations thereof;

-   and the rest of Rs in the group of R1 to R5 can be independently    selected from the group consisting of hydrogen, alkyl, alkoxy,    organic group with one or more hydroxyl groups, substituted organic    sulfonic acid or salt, substituted organic carboxylic acid or salt,    organic carboxylic ester, organic amine, and combinations thereof.

In the general molecular structure, at least two, preferably four, morepreferably six of the Rs in the group of R1 to R9 are hydrogen atoms.

When only one R, such as R5 in the group of R1 to R5 in the generalmolecular structure is a polyol molecular unit (b) having n=2 and m=1;and all rest of Rs in the group of R1 to R9 are all hydrogen atoms, thefollowing two chemical additives are obtained:

When one R, such as R5 is a polyol molecular unit (b) having n=2 andm=1; and one R, such as R2 is a six-member ring polyol; and all rest ofRs in the group of R1 to R14 are all hydrogen atoms, the followingchemical additive is obtained:

The preferred chemical additive comprises maltitol, lactitol,maltotritol, and combinations.

In some embodiments, the CMP polishing composition can be made into twoor more parts and mixed at the point of use.

In another aspect, there is provided a method of chemical mechanicalpolishing (CMP) a substrate having at least one surface comprisingsilicon dioxide (such tetraethyl orthosilicate or TEOS) using thechemical mechanical polishing (CMP) composition described above.

In yet another aspect, there is provided a system of chemical mechanicalpolishing (CMP) a substrate having at least one surface comprisingsilicon dioxide using the chemical mechanical polishing (CMP)composition described.

The polished oxide films can be Chemical vapor deposition (CVD), PlasmaEnhance CVD (PECVD), High Density Deposition CVD(HDP), or spin on oxidefilms.

The substrate disclosed above can further comprises a siliconnitride(SiN) surface. The removal selectivity of SiO₂: SiN is greaterthan 10, preferably greater than 20, and more preferably greater than30.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 depicts the effects of Maltitol or Lactitol on Film RR (Å/min.) &TEOS: SiN Selectivity

FIG. 2 depicts the effects of Maltitol or Lactitol on Oxide TrenchDishing vs OP Times (Sec.)

FIG. 3 depicts the effects of Maltitol or Lactitol on Slopes of Dishingvs OP Removal Amount

FIG. 4 depicts the effects of Maltitol or Lactitol on Trench Loss Rates(Å/min.)

FIG. 5 depicts the effects of pH on Film RR (Å/min) & Selectivity ofOxide: SiN

FIG. 6 depicts the effects of lactitol at different pH Conditions onOxide Trench Dishing vs over polishing(OP) times (Sec.)

FIG. 7 depicts the effects of lactitol at different pH on Slopes ofDishing vs OP Removal Amount

FIG. 8 depicts the of lactitol at different pH conditions on Trench LossRates (Å/min.)

FIG. 9 depicts mean particle size and size distribution stability test

Results@50° C.

FIG. 10 depicts mean particle size and size distribution stability testResults@50° C.

FIG. 11 depicts mean particle size and size distribution stability testResults@50° C.

FIG. 12 depicts the effect of different polishing compositions on TEOS &SiN total defect counts

DETAILED DESCRIPTION OF THE INVENTION

This invention relates to the Chemical mechanical polishing (CMP)compositions, methods and systems for CMP applications polishing oxideand doped oxide films.

In the global planarization of patterned structures, reducing oxidetrench dishing is a key factor to be considered. The lower trench oxideloss will prevent electrical current leaking between adjacenttransistors. Non-uniform trench oxide loss across die or/and within Diewill affect transistor performance and device fabrication yields. Severetrench oxide loss (high oxide trench dishing) will cause poor isolationof transistor resulting in device failure. Therefore, it is important toreduce trench oxide loss by reducing oxide trench dishing in CMPpolishing compositions.

The CMP compositions comprise the unique combination of abrasive and thesuitable chemical additives.

This invention provides a reduced oxide trench dishing and thus improvedover polishing window stability by introducing chemical additives asoxide trench dishing reducing additives in the Chemical mechanicalpolishing(CMP) compositions at wide pH range including acidic, neutraland alkaline pH conditions.

The Chemical Mechanical Polishing (CMP) compositions provide high oxidefilm removal rates, low SiN film removal rates and high SiO₂: SiNselectivity.

The Chemical Mechanical Polishing (CMP) composition also furtherprovides excellent mean particle size and size distribution stabilityfor the abrasive particles which is very important in maintaining robustCMP polishing performances with minimized polishing performancevariations.

In one aspect, there is provided a CMP polishing composition comprises:

-   abrasive particles selected from the group consisting of    ceria-coated inorganic metal oxide particles, ceria-coated organic    polymer particles, and combinations thereof;-   chemical additives as oxide trenching dishing and total defect count    reducers;-   a solvent; and-   optionally-   biocide; and-   pH adjuster;-   wherein the composition has a pH of 2 to 12, preferably 3 to 10, and    more preferably 4 to 9.

The ceria-coated inorganic metal oxide particles include, but are notlimited to, ceria-coated colloidal silica, ceria-coated high puritycolloidal silica, ceria-coated alumina, ceria-coated titania,ceria-coated zirconia, or any other ceria-coated inorganic metal oxideparticles.

The ceria-coated organic polymer particles include, but are not limitedto, ceria-coated polystyrene particles, ceria-coated polyurethaneparticle, ceria-coated polyacrylate particles, or any other ceria-coatedorganic polymer particles.

The average mean particle sizes or mean particle sizes (MPS) abrasiveparticles in the disclosed invention herein are ranged from 2 to 1,000nm, 5 to 500 nm, 15 to 400 nm or 25 to 250 nm. MPS refers to diameter ofthe particles and is measured using dynamic light scattering (DLS)technology.

The concentrations of abrasive particles range from 0.01 wt. % to 20 wt.%, 0.05 wt. % to 10 wt. %, or 0.1 wt. % to 5 wt. %.

The preferred abrasive particles are ceria-coated inorganic metal oxideparticles; more preferred abrasive particles are ceria-coated silicaparticles.

The solvent includes but is not limited to deionized (DI) water,distilled water, and alcoholic organic solvents.

The preferred solvent is DI water.

The CMP slurry may contain biocide from 0.0001 wt. % to 0.05 wt. %;0.0005 wt. % to 0.025 wt. %, or 0.001 wt. % to 0.01 wt. %.

The biocide includes, but is not limited to, Kathon™, Kathon™ CG/ICP II,from Dupont/Dow Chemical Co. Bioban from Dupont/Dow Chemical Co. Theyhave active ingredients of 5-chloro-2-methyl-4-isothiazolin-3-one2-methyl-4-isothiazolin-3-one.

The CMP slurry may contain a pH adjusting agent.

An acidic or basic pH adjusting agent can be used to adjust thepolishing compositions to the optimized pH value.

The acidic pH adjusting agents include, but are not limited to nitricacid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganicor organic acids, and mixtures thereof.

pH adjusting agents also include the basic pH adjusting agents, such assodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkylammonium hydroxide, organic quaternary ammonium hydroxide compounds,organic amines, and other chemical reagents that can be used to adjustpH towards the more alkaline direction.

The CMP slurry contains 0 wt. % to 1 wt. %; 0.01 wt. % to 0.5 wt. %; or0.1 wt. % to 0.25 wt. % pH adjusting agent.

The CMP slurry contains 0.01 wt. % to 20 wt. %, 0.025 wt. % to 10 wt. %,0.05 wt. % to 5 wt. %, or 0.1 to 3.0% wt. % of the chemical additives asoxide trenching dishing and total defect count reducers.

The chemical additives contain at least one six-member ring structuremotif ether bonded with at least one polyol molecular unit containingmultiple hydroxyl functional groups in the molecular unit structures orat least one polyol molecular unit containing multiple hydroxylfunctional groups in the molecular unit structures and at least onesix-member ring polyol. A polyol is an organic compound containinghydroxyl groups.

The chemical additives as oxide trenching dishing reducers contain atleast two, at least four, or at least six hydroxyl functional groups intheir molecular structures.

The general molecular structure for the chemical additives is shown in(a):

In one embodiment, at least one R in the group of R1 to R5 in thegeneral molecular structure is a polyol molecular unit having astructure shown in (b):

wherein n and m can be the same or different. m or n is independentlyselected from 1 to 5, preferably from 1 to 4, more preferably from 1 to3, and most preferably from 1 to 2;R6 to R9 can be the same or differentatoms or functional groups; and

-   the rest of Rs in the group of R1 to R5 can be independently    selected from the group consisting of hydrogen, alkyl, alkoxy,    organic group with one or more hydroxyl groups, substituted organic    sulfonic acid or salt, substituted organic carboxylic acid or salt,    organic carboxylic ester, organic amine, and combinations thereof.

In another embodiment, at least one R in the group of R1 to R5 in thegeneral molecular structure is a polyol molecular unit having astructure shown in (b); at least one R in the group of R1 to R5 in thegeneral molecular structure is a six-member ring polyol as shown in (c):

wherein each of R10, R11, R12, R13 and R14 is independently selectedfrom the group consisting of hydrogen, alkyl, alkoxy, organic group withone or more hydroxyl groups, substituted organic sulfonic acid or salt,substituted organic carboxylic acid or salt, organic carboxylic ester,organic amine, and combinations thereof;

-   and the rest of Rs in the group of R1 to R5 can be independently    selected from the group consisting of hydrogen, alkyl, alkoxy,    organic group with one or more hydroxyl groups, substituted organic    sulfonic acid or salt, substituted organic carboxylic acid or salt,    organic carboxylic ester, organic amine, and combinations thereof.

In the general molecular structure, at least two, preferably four, morepreferably six of the Rs in the group of R1 to R9 are hydrogen atoms.

When only one R, such as R5 in the group of R1 to R5 in the generalmolecular structure is a polyol molecular unit (b) having n=2 and m=1;and all rest of Rs in the group of R1 to R9 are all hydrogen atoms, thefollowing two chemical additives are obtained:

When one R, such as R5 is a polyol molecular unit (b) having n=2 andm=1; and one R, such as R2 is a six-member ring polyol; and all rest ofRs in the group of R1 to R14 are all hydrogen atoms, the followingchemical additive is obtained:

The preferred chemical additive comprises maltitol, lactitol,maltotritol, and combinations.

In some embodiments, the CMP polishing compositions can be made into twoor more parts and mixed at the point of use.

In another aspect, there is provided a method of chemical mechanicalpolishing (CMP) a substrate having at least one surface comprisingsilicon dioxide using the chemical mechanical polishing (CMP)composition described.

In yet another aspect, there is provided a system of chemical mechanicalpolishing (CMP) a substrate having at least one surface comprisingsilicon dioxide using the chemical mechanical polishing (CMP)composition described.

The polished oxide films can be Chemical vapor deposition (CVD), PlasmaEnhance CVD (PECVD), High Density Deposition CVD(HDP), spin on oxidefilms, flowable CVD oxide film, carbon doped oxide film, or nitrogendoped oxide film.

The substrate disclosed above can further comprises a silicon nitridesurface. The removal selectivity of SiO₂: SiN is greater than 10,preferably greater than 20, and more preferably greater than 30.

Dishing performance of the CMP compositions can also be characterized bythe ratio of oxide trench dishing rate (Å/min.) vs the blanket HDP filmremoval rate (Å/min.).

The smaller of this ratio is, the lower oxide trench dishing is. The CMPcompositions having the ratio of ≤0.1, 0.08, 0.06, 0.05, 0.03, or 0.02provide good oxide dishing performance.

In CMP polishing compositions, it is very important to keep abrasiveparticles stable to assure consistent desired CMP polishing performance.

When using the chemical additives in the CMP polishing compositions,these chemical additives can have some impacts on the stability ofabrasive particles in the compositions.

For example, when maltitol, lactitol or their derivatives, are used asoxide trench reducing agents in polishing compositions, these chemicaladditives can have some impacts on the stability of ceria-coatedinorganic oxide abrasives in the CMP polishing compositions.

Typically, the abrasive particle stability is tested by monitoring themean particle size (MPS) (nm) and particle size distribution parameterD99 (nm) changes vs the times or at elevated temperatures.

Particle size distribution may be quantified as a weight percentage ofparticles that has a size lower than a specified size. For example,parameter D99 (nm) represents a particle size (diameter) where 99 wt. %of all the slurry particles would have particle diameter equal to orsmaller than the D99 (nm). That is, D99 (nm) is a particle size that 99wt. % of the particles fall on and under.

The smaller of MPS (nm) and D99 (nm) changes, the more stable of theabrasive particles are and thus the CMP polishing compositions are.

Particle size distribution can be measured by any suitable techniquessuch as imaging, dynamic light scattering, hydrodynamic fluidfractionation, disc centrifuge etc.

MPS(nm) and D99 (nm) are both measured by dynamic light scattering inthis application.

CMP compositions providing abrasive particle stability have the changesfor MPS (nm) and D99 (nm) ≤6.0%, 5.0%, 3.0%, 2.0%, 1.0%, 0.5%, 0.3% or0.1% for a shelf time of at least 30 days, 40 days, 50 days, 60 days, 70days or 100 days at a temperature ranging from 20 to 60° C., 25 to 50°C.

The following non-limiting examples are presented to further illustratethe present invention.

CMP Methodology

In the examples presented below, CMP experiments were run using theprocedures and experimental conditions given below.

Glossary Components

Ceria-coated Silica: used as abrasive having a mean particle size rangedfrom approximately 20 nanometers (nm) to 500 nanometers (nm).

Ceria-coated Silica particles (with varied sizes) were supplied by JGCInc. in Japan.

Chemical additives, such as maltitol, lactitol and other chemical rawmaterials were supplied by Sigma-Aldrich, St. Louis, Mo.

TEOS: tetraethyl orthosilicate

Polishing Pad: Polishing pad, IC1010 and other pads were used duringCMP, supplied by DOW, Inc.

Parameters General

Å or A: angstrom(s)—a unit of length

BP: back pressure, in psi units

CMP: chemical mechanical planarization=chemical mechanical polishing

CS: carrier speed

DF: Down force: pressure applied during CMP, units psi

min: minute(s)

ml: milliliter(s)

mV: millivolt(s)

psi: pounds per square inch

PS: platen rotational speed of polishing tool, in rpm (revolution(s) perminute)

SF: slurry flow, ml/min

Wt. %: weight percentage (of a listed component)

TEOS: SiN Selectivity: (removal rate of TEOS)/(removal rate of SiN)

HDP: high density plasma deposited TEOS

TEOS or HDP Removal Rates: Measured TEOS or HDP removal rate at a givendown pressure. The down pressure of the CMP tool was 2.0, 3.0 or 4.0 psiin the examples.

SiN Removal Rates: Measured SiN removal rate at a given down pressure.The down pressure of the CMP tool was 3.0 psi in the examples.

Metrology

Films were measured with a ResMap CDE, model 168, manufactured byCreative Design Engineering, Inc, 20565 Alves Dr., Cupertino, Calif.,95014. The ResMap tool is a four-point probe sheet resistance tool.Forty-nine-point diameter scan at 5 mm edge exclusion for film wastaken.

CMP Tool

The CMP tool that was used is a 200 mm Mirra, or 300 mm Reflexionmanufactured by Applied Materials, 3050 Boweres Avenue, Santa Clara,Calif., 95054. An IC1000 pad supplied by DOW, Inc, 451 Bellevue Rd.,Newark, Del. 19713 was used on platen 1 for blanket and pattern waferstudies.

The IC1010 pad or other pad was broken in by conditioning the pad for 18mins. At 7 lbs. down force on the conditioner. To qualify the toolsettings and the pad break-in two tungsten monitors and two TEOSmonitors were polished with Versum® STI2305 slurry, supplied by VersumMaterials Inc. at baseline conditions.

Wafers

Polishing experiments were conducted using PECVD or LECVD or HD TEOSwafers. These blanket wafers were purchased from Silicon ValleyMicroelectronics, 2985 Kifer Rd., Santa Clara, Calif. 95051.

Polishing Experiments

In blanket wafer studies, oxide blanket wafers, and SiN blanket waferswere polished at baseline conditions. The tool baseline conditions were:table speed; 87 rpm; head speed: 93 rpm; membrane pressure: 3.0 psi;inter-tube pressure: 3.1 psi; retaining ring pressure: 5.1 psi; slurryflow speed: 200 ml/min.

The slurry was used to polish the patterned wafers (MIT860), supplied bySWK Associates, Inc. 2920 Scott Blvd. Santa Clara, Calif. 95054). Thesewafers were measured on the Veeco VX300 profiler/AFM instrument. The 3different sized pitch structures were used for oxide dishingmeasurement. The wafer was measured at center, middle, and edge diepositions.

TEOS: SiN Selectivity: (removal rate of TEOS)/(removal rate of SiN)obtained from the CMP polishing compositions were tunable.

WORKING EXAMPLES

In the following working examples, a reference (ref.)polishingcomposition comprising 0.2 wt. % ceria-coated silica, a biocide rangingfrom 0.0001 wt. % to 0.05 wt. %, and deionized water was prepared.

The polishing compositions were prepared with the reference (0.2 wt. %ceria-coated silica, a biocide ranging from 0.0001 wt. % to 0.05 wt. %,and deionized water) and a chemical additive ranging from 0.01 wt. % to2.0% wt. %.

All compositions in the examples, except compositions used in differentpH condition example had a pH at 5.35.

pH adjusting agent used for acidic pH condition and alkaline pHcondition were nitric acid and ammonium hydroxide respectively.

Example 1

In Example 1, the polishing compositions were prepared as shown inTable 1. The chemical additives, maltitol or lactitol were used at 0.28wt. % respectively.

The removal rates (RR at Å/min) for different films were tested. Theeffects of two selected chemical additives, maltitol and lactitol on thefilm removal rates and selectivity were observed.

The test results were listed in Table 1 and shown in FIG. 1.

TABLE 1 Effects of Maltitol or Lactitol on Film RR (Å/min.) & TEOS:SiNSelectivity TEOS Film RR HDP Film RR SiN Film RR TEOS:SiN Compositions(Å/min.) (Å/min.) (Å/min.) Selectivity 0.2% Ceria-coated Silica 32792718 349 9.4 pH 5.35 0.2% Ceria-coated Silica + 2623 2639 46 57.0 0.28%Maltitol pH 5.35 0.2% Ceria-coated Silica + 2630 2547 55 47.8 0.28%Lactitol pH 5.35

As the results shown in Table 1 and FIG. 1, the addition of the chemicaladditives, maltitol or lactitol, in the polishing compositions,significantly suppressed SiN removal rates while still afforded highTEOS and HDP film removal rates, thus, significantly increased Oxide:SiN film polishing selectivity.

Example 2

In Example 2, the polishing composition were prepared as shown in Table2. The chemical additives, maltitol or lactitol were used at 0.28 wt. %respectively. All samples had a pH at 5.35.

Oxide trenching dishing for without/or with different over polishingtimes were tested.

The effects of maltitol or lactitol on the oxide trenching dishing vsover polishing times were observed.

The test results were listed in Table 2 and shown in FIG. 2.

TABLE 2 Effects of Maltitol or Lactitol on Oxide Trench Dishing vs OPTimes (Sec.) OP Times 100 um pitch 200 um pitch Compositions (Sec.)dishing dishing 0.2% Ceria-coated Silica 0 165 291 pH 5.35 Ref. 60 8571096 120 1207 1531 0.2% Ceria-coated Silica + 0 408 616 0.28% MaltitolpH 5.35 60 480 713 120 542 803 0.2% Ceria-coated Silica + 0 349 5630.28% Lactitol pH 5.35 60 438 702 120 510 779

As the results shown in Table 2 and FIG. 2, the polishing compositionswith the addition of the chemical additives, maltitol or lactitol,afforded low oxide trench dishing on 100 um pitch, and 200 um pitchrespectively when 60 second or 120 second over polishing(OP) times wereapplied.

The compositions provided significant oxide trench dishing reductionscomparing to the reference polishing composition which did not have thechemical additives, maltitol or lactitol.

Table 3 listed the ratio of oxide trench dishing rate (Å/min.) vs theblanket HDP film removal rate (Å/min.).

TABLE 3 P100 Dishing Rate P200 Dishing Rate (Å/min.)/Blanket(Å/min.)/Blanket Compositions HDP RR (A/min.) HDP RR (A/min.) 0.2%Ceria-coated Silica 0.13 0.16 pH 5.35 0.2% Ceria-coated Silica + 0.020.03 0.28% Maltitol pH 5.35 0.2% Ceria-coated Silica + 0.03 0.03 0.28%Lactitol pH 5.35

As the results shown in Table 3, the addition of either maltitol orlactitol as oxide trench dishing reducer in polishing compositionssignificantly reduced the ratio of trench dishing rate vs the blanketHDP film removal rates. The lower of this ratio is, the lower of oxidetrench dishing is.

The slopes of oxide trench dishing vs the OP removal amount was showedin Table 4 and FIG. 3.

The results listed in Table 4 and FIG. 3 indicated that the compositionswith chemical additives, maltitol or lactitol provided lower slopeswhich indicated good over polishing window for maintaining low oxidetrench dishing even more oxide film removed in over polishing steps.

TABLE 4 Effects of Maltitol or Lactitol on Slopes of Dishing vs OPRemoval Amount P100 P200 P1000 dishing/OP dishing/OP dishing/OPCompositions Amt Slope Amt Slope Amt Slope 0.2% Ceria-coated Silica 0.190.23 0.25 pH 5.35 Ref. 0.2% Ceria-coated Silica + 0.04 0.05 0.08 0.28%Maltitol pH 5.35 0.2% Ceria-coated Silica + 0.04 0.06 0.09 0.28%Lactitol pH 5.35

As showing in Table 4 and FIG. 3, the CMP polishing compositionscomprising chemical additives such as maltitol or lactitol, andceria-coated silica again showed much lower slope values comparing tothose slope values obtained for the ceria-coated silica abrasive basedreference sample.

Example 3

In Example 3, the trench oxide loss rates were compared for thepolishing compositions using reference and working compositionscomprising maltitol or lactitol

The results were listed in Table 5 and depicted in FIG. 4.

TABLE 5 Effects of Maltitol or Lactitol on Trench Loss Rates (Å/min.)P100Trench P200Trench Loss Rate Loss Rate Compositions (Å/sec.) (Å/sec.)0.2% Ceria-coated Silica 18.5 19.3 pH 5.35 Ref. 0.2% Ceria-coatedSilica + 2.0 2.5 0.28% Maltitol pH 5.35 0.2% Ceria-coated Silica + 2.32.6 0.28% Lactitol pH 5.35

As the results shown in Table 4 and FIG. 4, the addition of maltitol orlactitol as oxide trench dishing reducing agent into the polishingcompositions, the trench loss rates were significantly reduced vs thereference sample without using such chemical additives.

Example 4

The compositions were prepared as shown in Table 6. The referencecomposition did not use any chemical additives. The working compositionscomprised 0.2 wt. % ceria-coated silica as abrasives, 0.28 wt. %lactitol as chemical additive, biocide, DI water, and a pH adjustingagent to provide different pH conditions.

The removal rates (RR at Å/min) for different films were tested. Theeffects of pH conditions on the film removal rates and selectivity wereobserved.

The test results were listed in Table 6 and shown in FIG. 5.

As the results shown in Table 6 and FIG. 5, the working compositionshaving lactitol as oxide trench dishing reducing agent provided similarhigh TEOS and HDP film removal rates, and similarly suppressed SiN filmremoval rates at three different pH conditions: acidic, neutral andalkaline. High TEOS: SiN selectivity were also maintained.

TABLE 6 Effects of pH on Film RR (Å/min) & Selectivity of Oxide:SiN TEOSFilm RR HDP Film RR SiN Film RR TEOS:SiN Compositions (Å/min.) (Å/min.)(Å/min.) Selectivity 0.2% Ceria-coated Silica 3279 2718 349 9.4 pH 5.350.2% Ceria-coated Silica + 2623 2639 46 57.0 0.28% Lactitol pH 5.35 0.2%Ceria-coated Silica + 2524 2517 56 45.1 0.28% Lactitol pH 7.0 0.2%Ceria-coated Silica + 2401 2417 52 46.2 0.28% Lactitol pH 8.0

As the results shown in Table 6 and FIG. 5, the working compositionshaving lactitol as oxide trench dishing reducing agent provided similarhigh TEOS and HDP film removal rates, and similarly suppressed SiN filmremoval rates at three different pH conditions: acidic, neutral andalkaline. High TEOS: SiN selectivity were also maintained.

Oxide trenching dishing using compositions without/or with lactitol aschemical additive over polishing times were also tested.

The effects of lactitol containing polishing composition at different pHconditions on the oxide trenching dishing vs over polishing times wereobserved.

The test results were listed in Table 7 and shown in FIG. 6.

As the results shown in Table 7 and FIG. 6, the polishing compositionswith the chemical additive lactitol, provided low oxide trench dishingon 100 um pitch, and 200 um pitch respectively when 60 second or 120second over polishing times were applied at three different tested pHconditions

The compositions with lactitol as oxide trench dishing reducing agentprovided significant oxide trench dishing reductions comparing to thereference polishing composition which did not use the chemical additive,lactitol.

TABLE 7 Effects of Lactitol at Different pH Conditions on Oxide TrenchDishing vs OP Times (Sec.) OP Times 100 um pitch 200 um pitchCompositions (Sec.) dishing dishing 0.2% Ceria-coated Silica 0 165 291pH 5.35 Ref. 60 857 1096 120 1207 1531 0.2% Ceria-coated Silica + 0 349563 0.28% Lactitol pH 5.35 60 438 702 120 510 779 0.2% Ceria-coatedSilica + 0 73 182 0.28% Lactitol pH 7.0 60 222 390 120 346 532 0.2%Ceria-coated Silica + 0 269 386 0.28% Lactitol pH 8.0 60 425 576 120 568766

The Ratio of oxide Trench Dishing Rate (Å/min.) vs Blanket HDP film RR(A/min.) at different pH was listed in Table 8.

As the results shown in Table 8, the addition of lactitol as oxidetrench dishing reducer in polishing composition significantly reducedthe ratio of trench dishing rate vs the blanket HDP film removal ratesat different pH conditions than that ratio obtained for reference sampleat pH 5.35.

TABLE 8 P100 Dishing Rate P200 Dishing Rate (Å/min.)/Blanket(Å/min.)/Blanket Compositions HDP RR (A/min.) HDP RR (A/min.) 0.2%Ceria-coated Silica 0.13 0.16 pH 5.35 0.2% Ceria-coated Silica + 0.030.03 0.28% Lactitol pH 5.35 0.2% Ceria-coated Silica + 0.05 0.06 0.28%Lactitol pH 7.0 0.2% Ceria-coated Silica + 0.06 0.08 0.28% Lactitol pH8.0

The slopes of oxide trench dishing vs the OP removal amount was showedin Table 9 and FIG. 7.

TABLE 9 Effects of Lactitol at Different pH on Slopes of Dishing vs OPRemoval Amount P100 P200 dishing/OP dishing/OP Compositions Amt SlopeAmt Slope 0.2% Ceria-coated Silica 0.19 0.23 pH 5.35 0.2% Ceria-coatedSilica + 0.04 0.06 0.28% Lactitol pH 5.35 0.2% Ceria-coated Silica +0.06 0.08 0.28% Lactitol pH 7.0 0.2% Ceria-coated Silica + 0.06 0.080.28% Lactitol pH 8.0

The results listed in Table 9 and FIG. 7 indicated that the compositionswith chemical additive lactitol provided lower slopes of trench dishingvs the over polishing removal amounts which indicated good overpolishing window for maintaining low oxide trench dishing even moreoxide film removed in over polishing steps at all three tested pHconditions.

The trench oxide loss rates were compared between the polishingcompositions using lactitol (at different pH conditions) and thereference without using lactitol at pH 5.35.

The results were listed in Table 10 and depicted in FIG. 8.

As the results shown in Table 10 and FIG. 8, the trench loss rates weresignificantly reduced for the polishing compositions comprising lactitolat different pH conditions comparing with the reference sample withoutusing lactitol.

The polishing test results obtained at different pH conditions indicatesthat the disclosed CMP polishing compositions comprising the chemicaladditives can be used for wide pH range; for acidic, neutral or alkalinepH conditions.

TABLE 10 Effects of Lactitol at Different pH Conditions on Trench LossRates (Å/min.) P100Trench P200Trench Loss Rate Loss Rate Compositions(Å/sec.) (Å/sec.) 0.2% Ceria-coated Silica 18.5 19.3 pH 5.35 Ref. 0.2%Ceria-coated Silica + 2.3 2.6 0.28% Lactitol pH 5.35 0.2% Ceria-coatedSilica + 3.3 4.0 0.28% Lactitol pH 7.0 0.2% Ceria-coated Silica + 3.74.2 0.28% Lactitol pH 8.0

Example 5

In this example, the stability of ceria-coated silica abrasive particlesin the compositions having chemical additives was monitored by measuringthe change of the mean particles size and the change of particle sizedistribution D99.

The reference composition was prepared using 0.2 wt. % ceria-coatedsilica abrasive and very low concentration of biocide, and pH wasadjusted to 5.35.

The working compositions were made using 0.2 wt. % or other wt. %ceria-coated silica abrasive, very low concentration of biocide, andvaried concentrations of maltitol or lactitol as oxide trench dishingreducer and with pH adjusted to 5.35.

The abrasive particle stability tests on the polishing compositions werecarried out at 50° C. for at least 10 days.

The MPS (nm) and D99 (nm) of the abrasive particles were measured usingdynamic light scattering (DLS) technology.

The stability test results were listed in Table 11 and depicted in FIG.9.

Data showed that 0.2 wt. % ceria-coated silica particles had a meanparticle size changes of less than 8.26×10⁻⁴ and 0.4% by day 22 at 50°C.

Data showed that 0.2 wt. % ceria-coated silica particles had a meanparticle size changes of less than 8.26×10⁻⁴ and 0.4% by day 22 at 50°C.

0.2 wt. % of the ceria-coated silica particles had a mean particle sizechanges of less than 0.1% and 2.7% by day 32 at 50° C. in thecomposition having 0.15 wt. % of maltitol and 0.15 wt. % lactitolrespectively.

TABLE 11 Particle Size Stability Test Results@50° C. - MPS (nm) &D99(nm) Particle Compostions Sizes (nm) Day 0 Day 1 Day 2 Day 3 Day 4Day 8 Day 15 Day 18 Day 22 Day 32 0.2% Ceria-coated Silica MPS(nm) 121.1121.1 121.4 122.0 121.8 121.0 pH 5.35 D99(nm) 177.4 179.6 177.6 178.8178.8 176.7 0.2% Ceria-coated Silica + MPS(nm) 115.8 116.6 114.5 116.3115.9 116.7 116.9 0.15% Maltitol pH 5.35 D99(nm) 179.6 179.6 178.4 179.6180.0 183.2 182.8 0.2% Ceria-coated Silica + MPS(nm) 117.2 115.5 113.8116.2 115.6 119.4 120.3 0.15% Lactitol pH 5.35 D99(nm) 180.0 178.8 178.4180.9 180.6 185.9 182.3

Data also showed that 0.2 wt. % of the ceria-coated silica particles hada D99 changes of less than 1.8% and 1.3% by day 32 at 50° C. in thecomposition having 0.15 wt. % of maltitol and 0.15 wt. % lactitolrespectively.

Additional stability tests were performed using abrasive particles withdifferent MPS (120 nm) and were performed longer (day 62) usingcompositions comprising maltitol. The results were listed in Table 12and depicted in FIG. 10.

TABLE 12 Particle Size Stability Test Results@50° C. - MPS (nm) &D99(nm) Particle Compositions Sizes (nm) Day 0 Day 1 Day 4 Day 8 Day 15Day 22 Day 33 Day 40 Day 62 0.2% Ceria-coated Silica + MPS(nm) 120 121.1122.8 123 123.2 121.5 121.9 120.6 119.9 0.15% Maltitol pH 5.35 D99(nm)176.3 178 180.9 180.4 180 172.4 178.3 176.2 177.4

Data also showed that 0.2 wt. % of the ceria-coated silica particles hadMPS and D99 changes of less than 8.5×10⁻⁴ and less than 0.63% by day 62at 50° C. respectively.

Furthermore, the particle stability tests were also conducted at 50° C.on polishing compositions comprised more concentrated ceria-coatedsilica abrasives (more than 0.2 wt. %) and more concentrated maltitol(more than 0.15 wt. %) as oxide trench dishing reducer.

The test results were listed in Table 13 and depicted in FIG. 11.

Data also showed that 0.8 wt. % of the ceria-coated silica particles hadMPS and D99 changes of less than 0.41% and less than 0.23% respectivelyby day 42 at 50° C. in the composition having 0.6 wt. % of maltitolrespectively.

TABLE 13 Particle Size Stability Test Results@50° C. - MPS (nm) &D99(nm) Particle Compositions Sizes (nm) Day 0 Day 3 Day 5 Day 7 Day 14Day 19 Day 25 Day 42 0.8% Ceria-coated Silica + MPS(nm) 122 122 121.9122 121 121 121.4 122.5 0.6% Maltitol pH 5.35 D99(nm) 180.5 179.5 180179.6 185.3 185.3 179.6 180.9 1.6% Ceria-coated Silica + MPS(nm) 121.2122.1 122.1 121.5 121.3 121.2 121.4 122.6 1.2% Maltitol pH 5.35 D99(nm)179.5 180 180 179.2 179.6 179.6 180.5 182.3 2.4% Ceria-coated Silica +MPS(nm) 122.1 121.9 121.5 121.1 121 121 122 122.5 1.8% Maltitol pH 5.35D99(nm) 180.5 180 179.2 178 180.1 180.1 180.5 180.9

1.6 wt. % of the ceria-coated silica particles had MPS and D99 changesof less than 1.2% and less than 1.6% respectively by day 42 at 50° C. inthe composition having 1.2 wt. % of maltitol respectively.

2.4 wt. % of the ceria-coated silica particles had MPS and D99 changesof less than 0.33% and less than 0.23% respectively by day 42 at 50° C.in the composition having 1.8 wt. % of maltitol respectively.

As the results shown in Table 9, 10, and 11 and FIGS. 9, 10 and 11, whenmaltitol or lactitol used as oxide trench dishing reducer withceria-coated silica particles as abrasives, the polishing compositionsshowed very good abrasive particle size stability as the changes ofparticle MPS(nm) and particle size distribution D99 (nm) were less than1.8% and less than 2.7% respectively even at elevated testingtemperatures.

Thus, the abrasive particles were stable in the disclosed CMP polishingcompositions.

Example 6

The following three polishing compositions were prepared for defectcount testing.

The first sample was prepared using 0.5 wt. % calcinated ceriaabrasives, 0.05 wt. % polyacrylate salt and low concentration ofbiocide. The first sample was picked since it is a known polishing CMPcomposition comprised of calcinated ceria abrasives and polyacrylatesalt as chemical additive for dispersing and trench dishing reducer.

The second sample was prepared using 0.2 wt. % ceria-coated silicaabrasives, 0.28 wt. % maltitol and low concentration of biocide; thethird sample was prepared using 0.2 wt. % ceria-coated silica abrasives,0.28 wt. % lactitol and low concentration of biocide; all threeformulations have pH valued at 5.35.

In order to obtain similar dielectric film removal rates used forcomparison, higher concentration of calcinated ceria abrasive was usedin sample 1.

The total defect counts on polished TEOS and SiN wafers were compared byusing three afore listed polishing compositions. The total defect countresults were listed in Table 14 and depicted in FIG. 12.

TABLE 14 Effects of Different Polishing Compositions on TEOS & SiN TotalDefect Counts TEOS Total SiN Total Defect Defect Count@0.13 Count@0.13Compositions μm LPD μm LPD 0.5% Calcinated Ceria + 3847 498 0.05%Polyacrylate Salt pH 0.2% Ceria-coated Silica + 438 73 0.28% Maltitol pH5.35 0.2% Ceria-coated Silica + 493 73 0.28% Lactitol pH 5.35

As the total defect count results shown in Table 12 and FIG. 12, thepolishing compositions using ceria-coated silica particles as abrasivesand either maltitol or lactitol as trench dishing reducing agentafforded significantly lower total defect counts on the polished TEOSand SiN wafers than the total defect counts obtained using a well-knownpolishing composition comprised of calcinated ceria abrasives andpolyacrylate salt as chemical additive.

Thus, the CMP polishing compositions in the present invention providereduced total defect counts through and post-polishing.

The embodiments of this invention listed above, including the workingexample, are exemplary of numerous embodiments that may be made of thisinvention. It is contemplated that numerous other configurations of theprocess may be used, and the materials used in the process may beelected from numerous materials other than those specifically disclosed.

1. A Chemical Mechanical Polishing(CMP) composition comprising: abrasiveparticles selected from the group consisting of ceria-coated inorganicmetal oxide particles selected from the group consisting of ceria-coatedcolloidal silica, ceria-coated high purity colloidal silica,ceria-coated alumina, ceria-coated titania, ceria-coated zirconiaparticles and combinations thereof; ceria-coated organic polymerparticles selected from the group consisting of ceria-coated polystyreneparticles, ceria-coated polyurethane particle, ceria-coated polyacrylateparticles, and combinations thereof; and combinations thereof; chemicaladditive having a range from 0.05 wt. % to 5 wt. %; solvent selectedfrom the group consisting of deionized (Dl) water, distilled water, andalcoholic organic solvents; and optionally biocide; and pH adjuster;wherein the composition has a pH of 3 to 10; mean particles size of theceria-coated inorganic oxide particles is from 115.8 nm to 500 nm; theabrasive particles have changes of mean particle size MPS(nm) and D99(nm) ≤3.0% over shelf time of ≥30 days at a temperature ranging from 20to 60° C.; wherein D99 (nm) is a particle size that 99 wt. % of theparticles fall on and under; and the chemical additive has at least fourhydroxyl functional groups in its molecular structure as shown in (a)

wherein R1, R2, R3, R4 and R5 (Rs in group of R1 to R5) are selected asfollowing (i) at least one R in the group of R1 to R5 is a polyolmolecular unit having a structure shown in (b):

wherein m or n is independently selected from 1 to 5; and each of R6,R7, R8 and R9 is independently selected from the group consisting ofhydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups,substituted organic sulfonic acid or salt, substituted organiccarboxylic acid or salt, organic carboxylic ester, organic amine, andcombinations thereof; and (ii) each of other Rs in the group of R1 to R5is independently selected from the group consisting of hydrogen, alkyl,alkoxy, organic group with one or more hydroxyl groups, substitutedorganic sulfonic acid or salt, substituted organic carboxylic acid orsalt, organic carboxylic ester, organic amine, and combinations thereof.2. The Chemical Mechanical Polishing (CMP) composition of claim 1,wherein the chemical additive has at least fix hydroxyl functionalgroups in its molecular structure.
 3. The Chemical Mechanical Polishing(CMP) composition of claim 1, wherein the polyol molecular unit (b) hasn=2 and m=1; and rest of Rs in the group of R1 to R9 are all hydrogenatoms, as shown below:

the solvent is deionized (DI) water; and the ceria-coated colloidalsilica particles have changes of mean particle size MPS (nm) and D99(nm) ≤2.0%.
 4. The chemical mechanical polishing composition of claim 1,wherein the composition comprises ceria-coated colloidal silicaparticles; the chemical additive is selected from the group consistingof maltitol, lactitol, maltotritol and combinations thereof; and water.5. The chemical mechanical polishing composition of claim 1, wherein thecomposition comprises at least one selected from the group consisting offrom 0.0001 wt. % to 0.05 wt. % of the biocide having active ingredientselected from the group consisting of5-chloro-2-methyl-4-isothiazolin-3-one, 2-methyl- -isothiazolin-3-one,and combinations thereof; from 0 wt. % to 1 wt. % of the pH adjustingagent selected from the group consisting of nitric acid, hydrochloricacid, sulfuric acid, phosphoric acid, other inorganic or organic acids,and mixtures thereof for acidic pH conditions; or selected from thegroup consisting of sodium hydride, potassium hydroxide, ammoniumhydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammoniumhydroxide compounds, organic amines, and combinations thereof foralkaline pH conditions; and combinations thereof.
 6. A method ofchemical mechanical polishing (CMP) a semiconductor substrate having atleast one surface comprising silicon oxide film, comprising (a)providing the semiconductor substrate; (b) providing a polishing pad;(c) providing a chemical mechanical polishing (CMP) compositioncomprising abrasive particles selected from the group consisting ofceria-coated inorganic metal oxide particles selected from the groupconsisting of ceria-coated colloidal silica, ceria-coated high puritycolloidal silica, ceria-coated alumina, ceria-coated titania,ceria-coated zirconia particles and combinations thereof; ceria-coatedorganic polymer particles selected from the group consisting ofceria-coated polystyrene particles, ceria-coated polyurethane particle,ceria-coated polyacrylate particles, and combinations thereof; andcombinations thereof; chemical additive; solvent selected from the groupconsisting of deionized (Dl) water, distilled water, and alcoholicorganic solvents; and optionally biocide; and pH adjuster; wherein thecomposition has a pH of 2 to 12; and the chemical additive has at leastfour hydroxyl functional groups in its molecular structure as shown in(a):

wherein R1, R2, R3, R4 and R5 (Rs in group R1 to R5) are selected fromthe group consisting of (1) (i) at least one R in the group of R1 to R5is a polyol molecular unit having a structure shown in (b):

wherein m or n is independently selected from 1 to 5; and each of R6,R7, R8 and R9 is independently selected from the group consisting ofhydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups,substituted organic sulfonic acid or salt, substituted organiccarboxylic acid or salt, organic carboxylic ester, organic amine, andcombinations thereof; and (ii) each of other Rs in the group of R1 to R5is independently selected from the group consisting of hydrogen, alkyl,alkoxy, organic group with one or more hydroxyl groups, substitutedorganic sulfonic acid or salt, substituted organic carboxylic acid orsalt, organic carboxylic ester, organic amine, and combinations thereof;and (2) (i) at least one R in group of R1 to R5 is a polyol molecularunit having a structure shown in (b):

wherein m or n is independently selected from 1 to 5; and each of R6,R7, R8 and R9 is independently selected from the group consisting ofhydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups,substituted organic sulfonic acid or salt, substituted organiccarboxylic acid or salt, organic carboxylic ester, organic amine, andcombinations thereof; (ii) at least one R in group of R1 to R5 is asix-member ring polyol as shown in (c):

wherein each of R10, R11, R12, R13 and R14 is independently selectedfrom the group consisting of hydrogen, alkyl, alkoxy, organic group withone or more hydroxyl groups, substituted organic sulfonic acid or salt,substituted organic carboxylic acid or salt, organic carboxylic ester,organic amine, and combinations thereof; and (iii) each of other Rs inthe group of R1 to R5 is independently selected from the groupconsisting of hydrogen, alkyl, alkoxy, organic group with one or morehydroxyl groups, substituted organic sulfonic acid or salt, substitutedorganic carboxylic acid or salt, organic carboxylic ester, organicamine, and combinations thereof; (d) contacting the surface of thesemiconductor substrate with the polishing pad and the chemicalmechanical polishing composition; and (e) polishing the least onesurface comprising silicon dioxide film; wherein the silicon oxide filmis selected from the group consisting of Chemical vapor deposition(CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD (HDP), orspin on silicon oxide film, flowable CVD oxide film, carbon doped oxidefilm, nitrogen doped oxide film, and combinations thereof.
 7. The methodof claim 6; wherein the chemical mechanical polishing (CMP) compositioncomprises 0.05 wt. % to 10 wt. % of the abrasive particles; wherein theabrasive particles have mean particle size ranging from 5 nm to 500 nm;0.01 wt. % to 20.0% wt. % of the chemical additive; wherein the chemicaladditive has at least fix hydroxyl functional groups in its molecularstructure; the abrasive particles have changes of mean particle sizeMPS(nm) and D99 (nm) ≤5.0% over shelf time of ≥30 days at a temperatureranging from 20 to 60° C.; wherein D99 (nm) is a particle size that 99wt. % of the particles fall on and under; and the chemical mechanicalpolishing (CMP) composition has a pH of 3 to
 10. 8. The method of claim7; wherein the chemical additive has R1, R2, R3, R4 and R5 (Rs in groupR1 to R5) selected from (1); the abrasive particles have changes of meanparticle size MPS (nm) and D99 (nm) ≤3.0% over shelf time of ≥30 days ata temperature ranging from 20 to 60° C.; wherein D99 (nm) is a particlesize that 99 wt. % of the particles fall on and under; and ratio ofoxide trench dishing rate (Å/min.) vs the blanket oxide film removalrate (Å/min.) is ≤0.1.
 9. The method of claim 8, wherein the polyolmolecular unit (b) in the chemical additive has n=2 and m=1; and rest ofRs in the group of R1 to R9 are all hydrogen atoms, as shown below:

the solvent is deionized (DI) water; the abrasive particles have changesof mean particle size MPS (nm) and D99 (nm) ≤2.0%; and ratio of oxidetrench dishing rate (Å/min.) vs the blanket oxide film removal rate(Å/min.) is ≤0.05.
 10. The method of claim 7; wherein the abrasiveparticles are ceria-coated colloidal silica particles; the chemicaladditive has R1, R2, R3, R4 and R5 (Rs in group R1 to R5) selected from(2); the abrasive particles have changes of mean particle size MPS (nm)and D99 (nm) ≤3.0% over shelf time of ≥30 days at a temperature rangingfrom 20 to 60° C.; wherein D99 (nm) is a particle size that 99 wt. % ofthe particles fall on and under; and ratio of oxide trench dishing rate(Å/min.) vs the blanket HDP film removal rate (Å/min.) is ≤0.1.
 11. Themethod of claim 10, wherein the polyol molecular unit (b) in thechemical additive has n=2 and m=1; and rest of Rs in the group of R1 toR14 are all hydrogen atoms, as shown below:

and the solvent is deionized (DI) water; the abrasive particles havechanges of mean particle size MPS (nm) and D99 (nm) ≤2.0%; and ratio ofoxide trench dishing rate (Å/min.) vs the blanket oxide film removalrate (Å/min.) is ≤0.05.
 12. The method of claim 7, wherein thecomposition comprises ceria-coated colloidal silica particles; thechemical additive selected from the group consisting of maltitol,lactitol, maltotritol and combinations thereof; and water.
 13. Themethod of claim 7, wherein the composition comprises at least oneselected from the group consisting of from 0.0001 wt. % to 0.05 wt. % ofthe biocide having active ingredient selected from the group consistingof 5-chloro-2-methyl-4-isothiazolin-3-one, 2-methyl--isothiazolin-3-one, and combinations thereof; from 0 wt. % to 1 wt. %of the pH adjusting agent selected from the group consisting of nitricacid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganicor organic acids, and mixtures thereof for acidic pH conditions; orselected from the group consisting of sodium hydride, potassiumhydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organicquaternary ammonium hydroxide compounds, organic amines, andcombinations thereof for alkaline pH conditions; and combinationsthereof.
 14. The method of claim 6; wherein the semiconductor substratefurther comprises a silicon nitride surface; and removal selectivity ofsilicon oxide: silicon nitride is greater than
 20. 15. A system ofchemical mechanical polishing (CMP) a semiconductor substrate having atleast one surface comprising silicon oxide film, comprising a. thesemiconductor substrate; b. a polishing pad; and c. a chemicalmechanical polishing (CMP) composition comprising 0.05 wt. % to 10 wt. %of abrasive particles selected from the group consisting of ceria-coatedinorganic metal oxide particles selected from the group consisting ofceria-coated colloidal silica, ceria-coated high purity colloidalsilica, ceria-coated alumina, ceria-coated titania, ceria-coatedzirconia particles and combinations thereof; ceria-coated organicpolymer particles selected from the group consisting of ceria-coatedpolystyrene particles, ceria-coated polyurethane particle, ceria-coatedpolyacrylate particles, and combinations thereof; and combinationsthereof; wherein the abrasive particles having mean particle sizeranging from 5 nm to 500 nm; and the abrasive particles have changes ofmean particle size MPS (nm) and D99 (nm) ≤5.0% over shelf time of ≥30days at a temperature ranging from 20 to 60° C.; wherein D99 (nm) is aparticle size that 99 wt. % of the particles fall on and under; 0.01 wt.% to 20.0% wt. % of chemical additive; solvent selected from the groupconsisting of deionized (DI) water, distilled water, and alcoholicorganic solvents; and optionally biocide; and pH adjuster; wherein thecomposition has a pH of 3 to 10; and the chemical additive has at leastfour hydroxyl functional groups in its molecular structure as shown in(a):

wherein R1, R2, R3, R4 and R5 (Rs in group R1 to R5) are selected fromthe group consisting of (1) (i) at least one R in the group of R1 to R5is a polyol molecular unit having a structure shown in (b):

wherein m or n is independently selected from 1 to 5; and each of R6,R7, R8 and R9 is independently selected from the group consisting ofhydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups,substituted organic sulfonic acid or salt, substituted organiccarboxylic acid or salt, organic carboxylic ester, organic amine, andcombinations thereof; and (ii) each of other Rs in the group of R1 to R5is independently selected from the group consisting of hydrogen, alkyl,alkoxy, organic group with one or more hydroxyl groups, substitutedorganic sulfonic acid or salt, substituted organic carboxylic acid orsalt, organic carboxylic ester, organic amine, and combinations thereof;and (2) (i) at least one R in group of R1 to R5 is a polyol molecularunit having a structure shown in (b):

wherein m or n is independently selected from 1 to 5; and each of R6,R7, R8 and R9 is independently selected from the group consisting ofhydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups,substituted organic sulfonic acid or salt, substituted organiccarboxylic acid or salt, organic carboxylic ester, organic amine, andcombinations thereof; (ii) at least one R in group of R1 to R5 is asix-member ring polyol as shown in (c):

wherein each of R10, R11, R12, R13 and R14 is independently selectedfrom the group consisting of hydrogen, alkyl, alkoxy, organic group withone or more hydroxyl groups, substituted organic sulfonic acid or salt,substituted organic carboxylic acid or salt, organic carboxylic ester,organic amine, and combinations thereof; and (iii) each of other Rs inthe group of R1 to R5 is independently selected from the groupconsisting of hydrogen, alkyl, alkoxy, organic group with one or morehydroxyl groups, substituted organic sulfonic acid or salt, substitutedorganic carboxylic acid or salt, organic carboxylic ester, organicamine, and combinations thereof; wherein the silicon oxide film isselected from the group consisting of Chemical vapor deposition (CVD),Plasma Enhance CVD (PECVD), High Density Deposition CVD(HDP), or spin onsilicon oxide film; and flowable CVD oxide film, carbon doped oxidefilm, nitrogen doped oxide film, and combinations thereof; the at leastone surface comprising silicon oxide film is in contact with thepolishing pad and the chemical mechanical polishing composition.
 16. Thesystem of claim 15; wherein the chemical additive has R1, R2, R3, R4 andR5 (Rs in group R1 to R5) selected from (1); the abrasive particles havechanges of mean particle size MPS (nm) and D99 (nm) ≤3.0% over shelftime of ≥30 days at a temperature ranging from 20 to 60° C.; wherein D99(nm) is a particle size that 99 wt. % of the particles fall on andunder; and ratio of oxide trench dishing rate (Å/min.) vs the blanketoxide film removal rate (Å/min.) is ≤0.1.
 17. The system of claim 16,wherein the polyol molecular unit (b) in the chemical additive has n=2and m=1; and rest of Rs in the group of R1 to R9 are all hydrogen atoms,as shown below:

the solvent is deionized (DI) water; and the abrasive particles havechanges of mean particle size MPS (nm) and D99 (nm) ≤2.0%; and ratio ofoxide trench dishing rate (Å/min.) vs the blanket oxide film removalrate (Å/min.) is ≤0.05.
 18. The system of claim 15; wherein the abrasiveparticles are ceria-coated colloidal silica particles; the chemicaladditive has at least fix hydroxyl functional groups in its molecularstructure, and R1, R2, R3, R4 and R5 (Rs in group R1 to R5) are selectedfrom (2); the abrasive particles have changes of mean particle size MPS(nm) and D99 (nm) ≤3.0% over shelf time of ≥30 days at a temperatureranging from 20 to 60° C.; wherein D99 (nm) is a particle size that 99wt. % of the particles fall on and under; and ratio of oxide trenchdishing rate (Å/min.) vs the blanket HDP film removal rate (Å/min.) is≤0.1.
 19. The system of claim 18; wherein the polyol molecular unit (b)in the chemical additive has n=2 and m 32 1; and rest of Rs in the groupof R1 to R14 are all hydrogen atoms, as shown below:

and the solvent is deionized (DI) water, and the ceria-coated colloidalsilica particles have changes of mean particle size MPS (nm) and D99(nm) ≤2.0%; and ratio of oxide trench dishing rate (Å/min.) vs theblanket oxide film removal rate (Å/min.) is ≤0.05.
 20. The system ofclaim 15; wherein the composition comprises ceria-coated colloidalsilica particles; the chemical additive selected from the groupconsisting of maltitol, lactitol, maltotritol and combinations thereof;water; and at least one selected from the group consisting of from0.0001 wt. % to 0.05 wt. % of the biocide having active ingredientselected from the group consisting of5-chloro-2-methyl-4-isothiazolin-3-one, 2-methyl- -isothiazolin-3-one,and combinations thereof; from 0 wt. % to 1 wt. % of the pH adjustingagent selected from the group consisting of nitric acid, hydrochloricacid, sulfuric acid, phosphoric acid, other inorganic or organic acids,and mixtures thereof for acidic pH conditions; or selected from thegroup consisting of sodium hydride, potassium hydroxide, ammoniumhydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammoniumhydroxide compounds, organic amines, and combinations thereof foralkaline pH conditions; and combinations thereof.